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SRAM
Austin Semiconductor, Inc. 16K x 4 SRAM
SRAM MEMORY ARRAY
MT5C6404
PIN ASSIGNMENT (Top View)
22-Pin DIP (C) (300 MIL)
A5 A6 A7 A8 A9 A10 A11 A12 A13 CE\ Vss 1 2 3 4 5 6 7 8 9 10 11 22 21 20 19 18 17 16 15 14 13 12 Vcc A4 A3 A2 A1 A0 DQ4 DQ3 DQ2 DQ1 WE\
AVAILABLE AS MILITARY SPECIFICATIONS
* * * SMD 5962-86859 SMD 5962-89692 MIL-STD-883
FEATURES
* Speeds: 12, 15, 20, 25, 35, 45, 55, and 70ns * Battery Backup: 2V data retention * High-performance, low-power CMOS double-metal process * Single +5V (+10%) Power Supply * Easy memory expansion with CE\ * All inputs and outputs are TTL compatible
GENERAL DESCRIPTION
The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE\) on all organizations. This enhancement can place the outputs in High-Z for additional flexibility in system design. Writing to these devices is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH and CE\ goes LOW. The device offers a reduced power standby mode when disabled. This allows system designs to achieve low standby power requirements. All devices operate from a single +5V power supply and all inputs and outputs are fully TTL compatible.
OPTIONS
* Timing 12ns access 15ns access 20ns access 25ns access 35ns access 45ns access 55ns access 70ns access * Package(s) Ceramic DIP (300 mil)
MARKING
-12 -15 -20 -25 -35 -45* -55* -70*
C
No. 105
* Operating Temperature Ranges Industrial (-40oC to +85oC) IT Military (-55oC to +125oC) XT * 2V data retention/low power L
*Electrical characteristics identical to those provided for the 35ns access devices.
For more products and information please visit our web site at www.austinsemiconductor.com
MT5C6404 Rev. 1.0 9/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
SRAM
Austin Semiconductor, Inc. FUNCTIONAL BLOCK DIAGRAM
VCC GND
MT5C6404
A
ROW DECODER
A A A A A A
DQ4
I/O CONTROL
65,536-BIT MEMORY ARRAY
DQ
CE\ (LSB)
COLUMN DECODER (LSB) POWER DOWN
WE\
DIP
A
A
A
A
A
A
A
TRUTH TABLE
MODE STANDBY READ WRITE CE\ H L L WE\ X H L DQ HIGH-Z Q D POWER STANDBY ACTIVE ACTIVE
MT5C6404 Rev. 1.0 9/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
SRAM
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS* Voltage on any Input or DQ Relative to Vss...-2.0V to +7.0V Voltage on Vcc Supply Relative to Vss...........-1.0V to +7.0V Storage Temperature.....................................-65oC to +150oC Power Dissipation.................................................................1W Max Junction Temperature............................................+175C Lead Temperature (soldering 10 seconds)...................+260oC Short Circuit Output Current...........................................50mA
MT5C6404
*Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TC < 125oC; VCC = 5V +10%)
DESCRIPTION Input High (Logic 1) Voltage Input Low (Logic 0) Voltage Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage
CONDITIONS
SYM VIH VIL
MIN 2.2 -0.5 -10 -10 2.4 ---
MAX Vcc+1.0V 0.8 10 10 --0.4
MAX -20 110
UNITS NOTES V V A A V V 1 1 1 1, 2
0V < VIN < VCC Outputs Disabled 0V < VOUT < VCC IOH = -4.0mA IOL = 8.0mA
ILI ILO VOH VOL
PARAMETER Power Supply Current: Operating Power Supply Current: Standby
CONDITIONS CE\ < VIL; VCC = MAX Output Open CE\ > VIH; VCC = MAX f = 1/tRC (MIN) Hz CE\ > VIH; All Other Inputs < VIL or > VIH, VCC = MAX f = 0 Hz CE\ > (VCC -0.2); VCC = MAX All Other Inputs < 0.2V or > (VCC - 0.2V), f = 0 Hz
SYM Icc
-12 140
-15 125
-25 100
-35 90
UNITS NOTES mA 3
ISBT1
45
41
36
33
30
mA
ISBT2
25
25
25
25
25
mA
ISBC2
5
5
5
5
5
mA
CAPACITANCE
DESCRIPTION Input Capacitance Output Capacitance CONDITIONS TA = 25 C, f = 1MHz Vcc = 5V
o
SYM CI CO
MAX 6 7
UNITS pF pF
NOTES 4 4
MT5C6404 Rev. 1.0 9/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
SRAM
Austin Semiconductor, Inc.
MT5C6404
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 5) (-55oC < TC < 125oC; VCC = 5V +10%)
DESCRIPTION READ CYCLE READ cycle time Address access time Chip Enable access time Output hold from address change Chip Enable to output in Low-Z Chip disable to output in High-Z Chip Enable to power-up time Chip disable to power-down time WRITE CYCLE WRITE cycle time Chip Enable to end of write Address valid to end of write Address setup time Address hold from end of write WRITE pulse width Data setup time Data hold time Write disable to output in Low-Z Write Enable to output in High-Z -12 -15 -20 -25 -35 SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES tRC tAA tACE tOH tLZCE tHZCE tPU tPD tWC tCW tAW tAS tAH tWP tDS tDH tLZWE tHZWE 12 12 10 2 2 7 0 12 12 10 10 0 0 10 7 0 2 0 15 12 12 0 0 12 8 0 2 0 0 15 20 15 15 0 0 15 10 0 2 0 2 2 8 0 20 25 20 20 0 0 20 12 0 2 0 15 15 13 2 2 10 0 25 35 25 25 0 0 25 15 0 2 0 20 20 15 2 2 12 0 35 25 25 20 2 2 15 35 35 25 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
7 6, 7
6
7
8
10
15
7 6, 7
MT5C6404 Rev. 1.0 9/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
SRAM
Austin Semiconductor, Inc.
+5V AC TEST CONDITIONS
Input pulse levels ...................................... Vss to 3.0V Input rise and fall times ......................................... 5ns Input timing reference levels ................................ 1.5V Output reference levels ....................................... 1.5V Output load ................................. See Figures 1 and 2
MT5C6404
+5V 480 480 Q 255 5 pF
Q 255 30pF
Fig. 1 Output Load Equivalent
Fig. 2 Output Load Equivalent
NOTES
All voltages referenced to VSS (GND). -3V for pulse width < 20ns ICC is dependent on output loading and cycle rates. The specified value applies with the outputs unloaded, and f = 1 Hz. t RC (MIN) 4. This parameter is sampled. 5. Test conditions as specified with the output loading as shown in Fig. 1 unless otherwise noted. 6. tHZCE and tHZWE are specified with CL = 5pF as in Fig. 2. Transition is measured 500mV typical from steady state voltage, allowing for actual tester RC time constant. 1. 2. 3.
At any given temperature and voltage condition, tHZCE is less than tLZCE, and tHZWE is less than tLZWE. 8. WE\ is HIGH for READ cycle. 9. Device is continuously selected. Chip enable is held in its active state. 10. Address valid prior to, or coincident with, latest occurring chip enable. 11. tRC = READ Cycle Time. 12. Chip enable (CE\) and write enable (WE\) can initiate and terminate a WRITE cycle.
7.
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)
DESCRIPTION VCC for Retention Data CE\ > (VCC - 0.2V) Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time VIN > (VCC - 0.2V) or < 0.2V VCC = 2V VCC = 3V CONDITIONS SYM VDR ICCDR ICCDR tCDR tR MIN 2 ----0 tRC MAX --300 500 ----UNITS V A A ns ns 4 4, 11 NOTES
LOW Vcc DATA RETENTION WAVEFORM
VCC
t CDR DATA RETENTION MODE 4.5V VDR > 2V 4.5V tR
CE\
MT5C6404 Rev. 1.0 9/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
4321 4321 4321 4321
321 321 321 321
VIH VIL
VDR
4326 321154321 87 4216 332154321 326 87 421154321 321154321 87 3326 487
987654321 987654321 4321 321 987654321 987654321
DON'T CARE UNDEFINED
SRAM
Austin Semiconductor, Inc.
READ CYCLE NO. 1 8, 9
MT5C6404
READ CYCLE NO. 2 7, 8, 10
MT5C6404 Rev. 1.0 9/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6
321 321 321
DON'T CARE
54321 4321 54321 54321 54321 5
UNDEFINED
SRAM
Austin Semiconductor, Inc.
WRITE CYCLE NO. 1 12 (Chip Enabled Controlled)
MT5C6404
WRITE CYCLE NO. 2 7, 12, 13 (Write Enabled Controlled)
MT5C6404 Rev. 1.0 9/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
7
321 321 321 321
4321 1 4321 4321 432
DON'T CARE UNDEFINED
SRAM
Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #105 (Package Designator C) SMD 5962-86859, Case Outline T SMD 5962-89692, Case Outline X
S D
S2
MT5C6404
A
Q
E
L1
L
S1
Pin 1
b1
e
b
E1 c
SYMBOL A b b1 c D E E1 e L L1 Q S S1 S2
SMD SPECIFICATIONS MIN MAX 0.100 0.200 0.014 0.023 0.030 0.060 0.008 0.015 1.050 1.260 0.260 0.310 0.280 0.320 0.100 BSC 0.125 0.200 0.150 --0.015 0.060 0.030 0.065 0.005 --0.005 ---
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. * All measurements are in inches.
MT5C6404 Rev. 1.0 9/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
SRAM
Austin Semiconductor, Inc.
MT5C6404
ORDERING INFORMATION
EXAMPLE: MT5C6404C-25L/XT Package Speed Options** Process Type ns C C C C C C C C -12 -15 -20 -25 -35 -45 -55 -70 L L L L L L L L /* /* /* /* /* /* /* /*
Device Number MT5C6404 MT5C6404 MT5C6404 MT5C6404 MT5C6404 MT5C6404 MT5C6404 MT5C6404
*AVAILABLE PROCESSES IT = Industrial Temperature Range XT = Extended Temperature Range 883C = Full Military Processing ** OPTIONS L = 2V Data Retention/Low Power
-40oC to +85oC -55oC to +125oC -55oC to +125oC
MT5C6404 Rev. 1.0 9/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
SRAM
Austin Semiconductor, Inc.
MT5C6404
ASI TO DSCC PART NUMBER CROSS REFERENCE*
ASI Package Designator C SMD 5962-86859
ASI Part # MT5C6804C-35/883C MT5C6804C-35L/883C MT5C6804C-45/883C MT5C6804C-45L/883C MT5C6804C-55/883C MT5C6804C-55L/883C SMD Part # 5962-8685924TA 5962-8685923TA 5962-8685922TA 5962-8685921TA 5962-8685920TA 5962-8685919TA
SMD 5962-89692
ASI Part # MT5C6804C-15/883C MT5C6804C-20/883C MT5C6804C-25/883C SMD Part # 5962-8969202XA 5962-8969204XA 5962-8969206XA
* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
MT5C6404 Rev. 1.0 9/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
10

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